Toshiba Semiconductor and Storage TK65A10N1,S4X

TK65A10N1,S4X
Part No.:
TK65A10N1,S4X
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Transistors - FETs, MOSFETs - Single
Package:
TO-220SIS
Datasheet:
LINKCOST DEVICE SOLUTION LIMITEDTK65A10N1,S4X.pdf
Description:
MOSFET N-CH 100V 65A TO220SIS
Quantity:

Unit Price:$0

Ext Price:$0

Payment:
Payment
Shipping:
Shipping

Product details

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Packaging:
Tube
Series:
U-MOSVIII-H
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
100 V
Current-ContinuousDrain(Id)@25°C:
65A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
10V
RdsOn(Max)@IdVgs:
4.8mOhm @ 32.5A, 10V
Vgs(th)(Max)@Id:
4V @ 1mA
GateCharge(Qg)(Max)@Vgs:
81 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
5400 pF @ 50 V
FETFeature:
-
PowerDissipation(Max):
45W (Tc)
OperatingTemperature:
150°C (TJ)
MountingType:
Through Hole
Category:
Transistors - FETs, MOSFETs - Single
Datasheet:
LINKCOST DEVICE SOLUTION LIMITEDTK65A10N1,S4X.pdf

1. How to order TK65A10N1,S4X on LINKCOST DEVICE SOLUTION LIMITED?

Currently, LINKCOST DEVICE SOLUTION LIMITED only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does LINKCOST DEVICE SOLUTION LIMITED guarantee that TK65A10N1,S4X is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the TK65A10N1,S4X. All suppliers must pass our qualification reviews before they can publish their products including TK65A10N1,S4X on LINKCOST DEVICE SOLUTION LIMITED; we pay more attention to the channels and quality of TK65A10N1,S4X products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the TK65A10N1,S4X price and inventory displayed accurate?

The price and inventory of TK65A10N1,S4X fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

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Warm Tips: Some orders in certain payment forms may require handling fee.

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Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of TK65A10N1,S4X?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TK65A10N1,S4X we delivered, we will accept the replacement or return of the TK65A10N1,S4X only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TK65A10N1,S4X.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TK65A10N1,S4X pin diagram, TK65A10N1,S4X datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image TK65A10N1,S4X SSM3K341TU,LF TPH8R903NL,LQ TK7S10N1Z,LQ SSM6K361NU,LF
Part Number TK65A10N1,S4X SSM3K341TU,LF TPH8R903NL,LQ TK7S10N1Z,LQ SSM6K361NU,LF
Manufacturer Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Packaging Tube Tube Tube Tube Tube
Series U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H U-MOSVIII-H
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V 100 V 100 V 100 V
Current-ContinuousDrain(Id)@25°C 65A (Tc) 65A (Tc) 65A (Tc) 65A (Tc) 65A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V 4.8mOhm @ 32.5A, 10V
Vgs(th)(Max)@Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 81 nC @ 10 V 81 nC @ 10 V 81 nC @ 10 V 81 nC @ 10 V 81 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 5400 pF @ 50 V 5400 pF @ 50 V 5400 pF @ 50 V 5400 pF @ 50 V 5400 pF @ 50 V
FETFeature - - - - -
PowerDissipation(Max) 45W (Tc) 45W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

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